I-LED yendabuko iye yaguqula intsimi yokukhanyisa kunye nokubonisa ngenxa yokusebenza kwayo okuphezulu ngokubhekiselele ekusebenzeni kakuhle.

I-LED yendabuko iye yaguqula intsimi yokukhanyisa kunye nokubonisa ngenxa yokusebenza kwayo okuphezulu ngokubhekiselele ekusebenzeni kakuhle, ukuzinza kunye nobukhulu besixhobo.Ii-LED zidla ngokuba ziifilimu ezicekethekileyo zesemiconductor ezinemilinganiselo esecaleni yeemilimitha, ezincinci kakhulu kunezixhobo zemveli ezinjengeebhalbhu ze-incandescent kunye neetyhubhu zecathode.Nangona kunjalo, usetyenziso lwe-optoelectronic oluvelayo, olufana nenyani kunye nenyani eyongeziweyo, ifuna ii-LED kubungakanani beemicrons okanye ngaphantsi.Ithemba lelokuba i-micro - okanye i-submicron scale LED (µleds) iyaqhubeka ineempawu ezininzi eziphezulu ezisele zikho ii-lead zemveli, ezifana nokukhutshwa okuzinzile, ukusebenza kakuhle kunye nokukhanya, ukusetyenziswa kwamandla aphantsi kakhulu, kunye nokukhutshwa kombala ogcweleyo, ngelixa imalunga nesigidi esiphindwe kabini kwindawo encinci, ivumela iziboniso ezixineneyo.Iitshiphusi ezikhokelwayo ezinjalo zinokuvula indlela yeesekethe zefotonic ezinamandla ngakumbi ukuba zinokukhuliswa itshiphu enye kwi-Si kwaye idityaniswe nesixhobo sombane sesinyithi se-oxide semiconductor (CMOS).

Nangona kunjalo, ukuza kuthi ga ngoku, ezo µleds zisahleli zinqabile, ngakumbi kudederhu lwemibhobho yamaza eluhlaza ukuya kubomvu.Indlela yesithethe ekhokelwa µ yinkqubo ephuma phezulu ezantsi apho ifilimu ze-InGaN quantum well (QW) zihlonyelwa kwizixhobo ezincinci ngokwenkqubo yokubhala.Ngelixa ifilimu ecekethekileyo ye-InGaN QW esekwe kwi-tio2 µleds itsale umdla omkhulu ngenxa yeepropathi ezininzi ezigqwesileyo ze-InGaN, ezinje ngothutho olusebenzayo lokuthwala kunye ne-wavelength tunability kulo lonke uluhlu olubonakalayo, kude kube ngoku bebekhathazwa yimiba efana nodonga olusecaleni. ukonakala komhlwa osiba mandundu njengoko ubungakanani besixhobo sincipha.Ukongezelela, ngenxa yobukho bemimandla ye-polarization, bane-wavelength / ukungazinzi kombala.Kule ngxaki, i-non-polar kunye ne-semi-polar ye-InGaN kunye ne-photonic crystal cavity izisombululo ziye zacetywa, kodwa azanelisi okwangoku.

Kwiphepha elitsha elipapashwe kwiSayensi yokuKhanya kunye nezicelo, abaphandi abakhokelwa nguZetian Mi, unjingalwazi kwiYunivesithi yaseMichigan, u-Annabel, baye baphuhlisa i-submicron scale eluhlaza LED iii - nitride eyoyisa le miqobo kanye kunye.Ezi µleds zadityaniswa ngokukhethwa kwe-plasma yengingqi encediswa yi-molecular beam epitaxy.Umahluko omkhulu kwindlela eqhelekileyo yokujonga phezulu ukuya phantsi, iµled apha iqulathe uluhlu lweenanowires, enye nenye kuphela i-100 ukuya kuma-200 nm ubukhulu, yahlulwe ngamashumi eenanometers.Le ndlela isezantsi ukuya phezulu inqanda ukonakala kodonga olusecaleni.

Inxalenye yokukhanya kwesixhobo, eyaziwa ngokuba ngummandla osebenzayo, iqulethwe yi-core-shell multiple quantum well (MQW) izakhiwo ezibonakaliswe yi-nanowire morphology.Ngokukodwa, i-MQW iqulethe i-InGaN kakuhle kunye nomqobo we-AlGaN.Ngenxa yomahluko ekufudukeni kwe-athomu ye-adsorbed ye-Group III element indium, i-gallium kunye ne-aluminium kwiindonga ezisecaleni, safumanisa ukuba i-indium yayilahlekile kwiindonga ze-nanowires, apho igobolondo le-GaN / AlGaN libophe i-MQW core njenge-burrito.Abaphandi bafumanise ukuba umxholo we-Al weli qokobhe le-GaN/AlGaN wehla kancinci ukusuka kwicala lenaliti ye-electron ye-nanowires ukuya kwicala lenaliti yomngxuma.Ngenxa yomahluko kwiinkalo ze-polarization zangaphakathi ze-GaN kunye ne-AlN, i-gradient ye-volume ye-Al kwi-AlGaN layer yenza i-electron yamahhala, ekulula ukuhamba kwi-core MQW kunye nokunciphisa ukungazinzi kombala ngokunciphisa intsimi ye-polarization.

Enyanisweni, abaphandi baye bafumanisa ukuba izixhobo ezingaphantsi kwe-micron enye ububanzi, ukuphakama kwe-wavelength ye-electroluminescence, okanye ukukhutshwa kokukhanya okubangelwa ngoku, kuhlala kuhleli ngokulandelelana kobukhulu benguqu kwinaliti yangoku.Ukongeza, iqela likaNjingalwazi Mi ngaphambili liphuhlise indlela yokukhulisa i-GaN ekumgangatho ophezulu kwi-silicon ukukhulisa i-nanowire led kwi-silicon.Ke, i-µled ihlala kwi-Si substrate elungele ukudityaniswa nezinye i-elektroniki ze-CMOS.

Oku µled ngokulula kunezicelo ezininzi ezinokubakho.Iqonga lesixhobo liya kuba namandla ngakumbi njengoko ubude be-wavelength bomboniso odibeneyo we-RGB kwi-chip busanda bubomvu.